<i>Ab initio</i> comparison of spin-transport properties in MgO-spaced ferrimagnetic tunnel junctions based on Mn<sub>3</sub>Ga and Mn<sub>3</sub>Al
نویسندگان
چکیده
We report on first-principles spin-polarised quantum transport calculations (from NEGF + DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based two different Mn-based Heusler ferrimagnetic metals, namely Mn3Al and Mn3Ga their tetragonal DO22 phase. The former is a fully compensated half-metallic ferrimagnet, while the latter low-moment high-spin-polarisation both with small lattice mismatch from MgO. In identical symmetric asymmetric interface reconstructions across 3-monolayer thick MgO barrier for ferrimagets, linear response (low-voltage) spin-transfer torque (STT) tunneling magneto-resistance (TMR) effects are evaluated. A larger staggered in-plane STT found case, vanishes quickly away (similarly to ferromagnetic MTJs). roles reversed TMR, which practically 100% Mn3Al-based MTJs (using conservative definition) as opposed 60% case. weak dependence exact reconstruction would suggest Mn3Ga–Mn3Al solid solutions possible route towards optimal trade-off of TMR low-bias, low-temperature regime.
منابع مشابه
Spin torque, tunnel-current spin polarization, and magnetoresistance in MgO magnetic tunnel junctions.
We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-...
متن کاملThermal spin transfer in Fe-MgO-Fe tunnel junctions.
We compute thermal spin transfer (TST) torques in Fe-MgO-Fe tunnel junctions using a first principles wave-function-matching method. At room temperature, the TST in a junction with 3 MgO monolayers amounts to 10(-7) J/m(2)/K, which is estimated to cause magnetization reversal for temperature differences over the barrier of the order of 10 K. The large TST can be explained by multiple scattering...
متن کاملSpin-dependent transport in molecular tunnel junctions.
We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni-octanethiol-Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while remaining s...
متن کاملEffect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions
Effect of interface states on spin-dependent tunneling in Fe/MgO/ Fe tunnel junctions" (2005).
متن کاملSpin diode based on Fe/MgO double tunnel junction.
We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2023
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/9.0000556